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| 1+ | 461.86 грн |
| 10+ | 408.78 грн |
| 100+ | 291.34 грн |
| 600+ | 248.12 грн |
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| 10200+ | 185.40 грн |
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Технічний опис STW120NF10 STMicroelectronics
Description: MOSFET N-CH 100V 110A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 312W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції STW120NF10
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STW120NF10 | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 100V 110A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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