STW15N95K5 STMicroelectronics
| Кількість | Ціна |
|---|---|
| 1+ | 340.71 грн |
| 10+ | 177.94 грн |
| 100+ | 113.61 грн |
| 600+ | 110.82 грн |
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Технічний опис STW15N95K5 STMicroelectronics
Description: MOSFET N-CH 950V 12A TO247, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 170W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції STW15N95K5
| Фото | Назва | Виробник | Інформація |
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STW15N95K5 | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 950V 12A TO247Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
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STW15N95K5 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 7.6A; 170W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 7.6A Power dissipation: 170W Case: TO247 Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |