Технічний опис STW19NM60N STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції STW19NM60N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| STW19NM60N | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 600V 13A Automotive 3-Pin(3+Tab) TO-247 Tube |
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| STW19NM60N | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.2A; Idm: 52A; 110W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.2A Pulsed drain current: 52A Power dissipation: 110W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.26Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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STW19NM60N | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 13A Automotive 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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STW19NM60N | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V Qualification: AEC-Q101 |
товар відсутній |
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STW19NM60N | Виробник : STMicroelectronics |
MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM) |
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| STW19NM60N | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.2A; Idm: 52A; 110W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.2A Pulsed drain current: 52A Power dissipation: 110W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.26Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |