STW28NM60ND STMicroelectronics
| Кількість | Ціна |
|---|---|
| 1+ | 382.18 грн |
| 25+ | 270.11 грн |
| 100+ | 219.55 грн |
| 600+ | 218.85 грн |
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Технічний опис STW28NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 23A TO247, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції STW28NM60ND
| Фото | Назва | Виробник | Інформація |
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STW28NM60ND | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 600V 23A TO247Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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