Технічний опис STW36N55M5 STMicroelectronics
Description: MOSFET N-CH 550V 33A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V.
Інші пропозиції STW36N55M5
| Фото | Назва | Виробник | Інформація |
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Ціна |
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STW36N55M5 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 550V 33A 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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STW36N55M5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 550V 33A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V |
товару немає в наявності |
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STW36N55M5 | Виробник : STMicroelectronics |
MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh M5 FET |
товару немає в наявності |