STW36NM60ND STMicroelectronics
| Кількість | Ціна |
|---|---|
| 1+ | 394.23 грн |
| 10+ | 355.75 грн |
| 100+ | 291.23 грн |
| 250+ | 290.53 грн |
| 600+ | 283.57 грн |
| 1200+ | 277.99 грн |
| 3000+ | 273.81 грн |
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Технічний опис STW36NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 29A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції STW36NM60ND
| Фото | Назва | Виробник | Інформація |
Доступність |
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STW36NM60ND | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 600V 29A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Qualification: AEC-Q101 |
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