STW50N65DM6 STMICROELECTRONICS
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STW50N65DM6 - Leistungs-MOSFET, n-Kanal, 650 V, 33 A, 0.074 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 33A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh DM6
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.074ohm
SVHC: No SVHC (23-Jan-2024)
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Технічний опис STW50N65DM6 STMICROELECTRONICS
Description: STMICROELECTRONICS - STW50N65DM6 - Leistungs-MOSFET, n-Kanal, 650 V, 33 A, 0.074 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 33A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 250W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: MDmesh DM6, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.074ohm, SVHC: No SVHC (23-Jan-2024).
Інші пропозиції STW50N65DM6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STW50N65DM6 | STMicroelectronics |
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
 |
STW50N65DM6 | STMicroelectronics |
Description: MOSFET N-CH 650V 33A TO247-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 52500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Long Leads Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel |
товару немає в наявності |
В кошику од. на суму грн. |
 |
STW50N65DM6 | STMicroelectronics |
MOSFETs N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
| STW50N65DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A Type of transistor: N-MOSFET Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 52.5nC Kind of package: tube Gate-source voltage: ±25V On-state resistance: 91mΩ Pulsed drain current: 120A Polarisation: unipolar Technology: MDmesh™ DM6 Drain current: 21A Kind of channel: enhancement Drain-source voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. |
| STW50N65DM6 |
|
Виробник: STMicroelectronics
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-247 Tube
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| STW50N65DM6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 33A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 52500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 650V 33A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 52500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
товару немає в наявності
В кошику
од. на суму грн.
| STW50N65DM6 |
|
Виробник: STMicroelectronics
MOSFETs N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package
MOSFETs N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| STW50N65DM6 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Gate-source voltage: ±25V
On-state resistance: 91mΩ
Pulsed drain current: 120A
Polarisation: unipolar
Technology: MDmesh™ DM6
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Gate-source voltage: ±25V
On-state resistance: 91mΩ
Pulsed drain current: 120A
Polarisation: unipolar
Technology: MDmesh™ DM6
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.