STW55NM60N STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 51A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Технічний опис STW55NM60N STMicroelectronics
Description: MOSFET N-CH 600V 51A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 350W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції STW55NM60N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STW55NM60N | Виробник : STMicroelectronics |
MOSFET N-Channel 600V Power MDmesh |
товару немає в наявності |