STW55NM60ND STMicroelectronics

Description: MOSFET N-CH 600V 51A TO247-3, Power Dissipation (Max): 350W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA.