STW58N65DM2AG STMicroelectronics
Виробник: STMicroelectronics
MOSFETs Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET i
| Кількість | Ціна |
|---|---|
| 1+ | 711.50 грн |
| 10+ | 623.59 грн |
| 100+ | 492.07 грн |
| 600+ | 372.19 грн |
Відгуки про товар
Написати відгук
Технічний опис STW58N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 48A TO247, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Qualification: AEC-Q101, Grade: Automotive, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.
Інші пропозиції STW58N65DM2AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
STW58N65DM2AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 48A TO247 Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
товару немає в наявності |