Технічний опис STW63N65DM2 STMicroelectronics
Description: MOSFET N-CH 650V 65A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V.
Інші пропозиції STW63N65DM2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STW63N65DM2 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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STW63N65DM2 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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| STW63N65DM2 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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STW63N65DM2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 65A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V |
товару немає в наявності |
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| STW63N65DM2 | Виробник : STMicroelectronics |
MOSFETs N-channel 650 V, 0.042 Ohm typ 60 A MDmesh DM2 Power MOSFET |
товару немає в наявності |
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| STW63N65DM2 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |