STW65N045M9-4 STMICROELECTRONICS
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STW65N045M9-4 - Leistungs-MOSFET, n-Kanal, 650 V, 54 A, 0.039 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 54A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4.2V
Verlustleistung: 312W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.039ohm
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Технічний опис STW65N045M9-4 STMICROELECTRONICS
Description: STMICROELECTRONICS - STW65N045M9-4 - Leistungs-MOSFET, n-Kanal, 650 V, 54 A, 0.039 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 54A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4.2V, Verlustleistung: 312W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.039ohm.
Інші пропозиції STW65N045M9-4 за ціною від 690.41 грн до 898.28 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
| STW65N045M9-4 | STMicroelectronics |
Description: N-CHANNEL 650 V, 39 MOHM TYP., 5 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
|
| STW65N045M9-4 |
|
Виробник: STMicroelectronics
Description: N-CHANNEL 650 V, 39 MOHM TYP., 5
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V
Description: N-CHANNEL 650 V, 39 MOHM TYP., 5
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 898.28 грн |
| 30+ | 690.41 грн |