Технічний опис STW68N60M6-4 STMicroelectronics
Description: MOSFET N-CH 600V 63A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 31.5A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V.
Інші пропозиції STW68N60M6-4
| Фото | Назва | Виробник | Інформація |
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| STW68N60M6-4 | Виробник : STMicroelectronics |
 STW68N60M6-4 THT N channel transistors |
товару немає в наявності |
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STW68N60M6-4 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 63A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 31.5A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V |
товару немає в наявності |
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STW68N60M6-4 | Виробник : STMicroelectronics |
MOSFETs N-channel 600 V, 35 mOhm typ 63 A MDmesh M6 Power MOSFET |
товару немає в наявності |