STWA38N65DM6AG STMicroelectronics
Виробник: STMicroelectronicsDescription: DISCRETE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 21A, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247 Long Leads
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 100 V
Qualification: AEC-Q101
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Технічний опис STWA38N65DM6AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 21A, 10V, Power Dissipation (Max): 347W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247 Long Leads, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 54.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції STWA38N65DM6AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STWA38N65DM6AG | Виробник : STMicroelectronics |
MOSFETs Automotive-grade N-channel 650 V, 68 mOhm typ., 42 A MDmesh DM6 Power MOSFET in |
товару немає в наявності |