STWA48N60DM2 STMicroelectronics
Виробник: STMicroelectronics
MOSFETs N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long l
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 720.03 грн |
| 10+ | 485.86 грн |
| 100+ | 332.05 грн |
| 600+ | 267.16 грн |
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Технічний опис STWA48N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 40A TO247, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції STWA48N60DM2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STWA48N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 40A TO247 Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Supplier Device Package: TO-247 Long Leads Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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| STWA48N60DM2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 40A TO247
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 40A TO247
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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од. на суму грн.