STWA65N045M9 STMicroelectronics
Виробник: STMicroelectronics
Description: N-CHANNEL 650 V, 39 MOHM TYP., 5
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 882.58 грн |
| 10+ | 728.59 грн |
| 100+ | 607.19 грн |
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Технічний опис STWA65N045M9 STMicroelectronics
Description: N-CHANNEL 650 V, 39 MOHM TYP., 5, Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 4.2V @ 250µA, Power Dissipation (Max): 312W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції STWA65N045M9
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STWA65N045M9 | Виробник : STMicroelectronics |
MOSFETs N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET |
товару немає в наявності |