STWA67N60M6 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 655.37 грн |
| 10+ | 433.86 грн |
| 100+ | 322.33 грн |
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Технічний опис STWA67N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 330W (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції STWA67N60M6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| STWA67N60M6 | STMicroelectronics |
MOSFETs N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long lead |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | |
| STWA67N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 200A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 72.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| STWA67N60M6 |
|
Виробник: STMicroelectronics
MOSFETs N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long lead
MOSFETs N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long lead
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| STWA67N60M6 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 72.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 72.5nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.