STWA72N60DM2AG STMicroelectronics
Виробник: STMicroelectronicsTrans MOSFET N-CH 600V 66A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
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Технічний опис STWA72N60DM2AG STMicroelectronics
Description: MOSFET N-CH 600V 66A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 Long Leads, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції STWA72N60DM2AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| STWA72N60DM2AG | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 220A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Pulsed drain current: 220A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
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STWA72N60DM2AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 66A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Long Leads Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
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| STWA72N60DM2AG | Виробник : STMicroelectronics |
MOSFET Automotive-grade N-channel 600 V, 37 mOhm typ 66 A, MDmesh DM2 Power MOSFET |
товару немає в наявності |
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| STWA72N60DM2AG | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 220A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Pulsed drain current: 220A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |