STY100NS20FD STM

Description: MOSFET N-CH 200V 100A MAX247, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: MAX247™, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 450W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V.