STY139N65M5

Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 130A MAX247
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 363 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MAX247™
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

Виробник: STMicroelectronics
MOSFETs N-Ch 650V 0.014 Ohm Mdmesh M5 130A

Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 78A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD

Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STY139N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 130 A, 0.014 ohm, MAX-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 130A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 625W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: MAX-247
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh V
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.014ohm

Виробник: STMicroelectronics
Trans MOSFET N-CH 650V 130A 3-Pin(3+Tab) Max247 Tube