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SUD50N04-16P-E3

SUD50N04-16P-E3 Vishay


suusud50.pdf Виробник: Vishay
Trans MOSFET N-CH 40V 9.8A 3-Pin(2+Tab) DPAK
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Технічний опис SUD50N04-16P-E3 Vishay

Description: MOSFET N-CH 40V 9.8A/20A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V, Power Dissipation (Max): 3.1W (Ta), 35.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V.

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SUD50N04-16P-E3 SUD50N04-16P-E3 Виробник : Vishay Siliconix suusud50.pdf Description: MOSFET N-CH 40V 9.8A/20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V
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