SUD50P04-23-E3 Vishay Siliconix

Description: MOSFET P-CH 40V 8.2A/20A TO252, Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 45.4W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 20A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).