SUD50P10-43-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 38A TO252
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис SUD50P10-43-E3 Vishay Siliconix
Description: MOSFET P-CH 100V 38A TO252, Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 8.3W (Ta), 136W (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 9.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).