SUM110P08-11-E3 Vishay Siliconix

Description: MOSFET P-CH 80V 110A TO263, Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 13.6W (Ta), 375W (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).