SUM52N20-39P-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 52A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 15 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.12W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис SUM52N20-39P-E3 Vishay Siliconix
Description: MOSFET N-CH 200V 52A TO263, Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 15 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 3.12W (Ta), 250W (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 20A, 15V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).