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SUP40P10-43-GE3

SUP40P10-43-GE3 Vishay Siliconix

sup40p10.pdf
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 36A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис SUP40P10-43-GE3 Vishay Siliconix

Description: MOSFET P-CH 100V 36A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.