Технічний опис SVC236-TB-E ON Semiconductor
Description: DIFFUSED JUNCTION TYPE SILICON V, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Diode Type: 1 Pair Common Cathode, Operating Temperature: 125°C (TJ), Capacitance @ Vr, F: 16.84pF @ 6.5V, 1MHz, Q @ Vr, F: 70 @ 3V, 100MHz, Capacitance Ratio Condition: C1/C6.5, Supplier Device Package: 3-CP, Voltage - Peak Reverse (Max): 16 V, Capacitance Ratio: 5.
Інші пропозиції SVC236-TB-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SVC236-TB-E | Виробник : Sanyo |
 Description: DIFFUSED JUNCTION TYPE SILICON VPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: 1 Pair Common Cathode Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 16.84pF @ 6.5V, 1MHz Q @ Vr, F: 70 @ 3V, 100MHz Capacitance Ratio Condition: C1/C6.5 Supplier Device Package: 3-CP Voltage - Peak Reverse (Max): 16 V Capacitance Ratio: 5 |
товару немає в наявності |