| Кількість | Ціна |
|---|---|
| 7+ | 47.34 грн |
| 10+ | 40.11 грн |
| 100+ | 26.09 грн |
| 500+ | 20.46 грн |
| 1000+ | 15.82 грн |
| 2500+ | 13.01 грн |
| 10000+ | 12.03 грн |
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Технічний опис SVD14N03RT4G onsemi
Description: MOSFET N-CH 25V 2.5A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Last Time Buy, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції SVD14N03RT4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SVD14N03RT4G | onsemi |
 Description: MOSFET N-CH 25V 2.5A DPAKInput Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Last Time Buy Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| SVD14N03RT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.