SZMMBZ33VALT1G ON Semiconductor
Виробник: ON SemiconductorESD Suppressor Diode Zener Uni-Dir/Bi-Dir 26V Automotive 3-Pin SOT-23 T/R
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.15 грн |
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Технічний опис SZMMBZ33VALT1G ON Semiconductor
Description: DIODE ZENER 26V SOT23-3, Tolerance: ±5%, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Type: Zener, Configuration: 1 Pair Common Anode, Operating Temperature: -55°C ~ 150°C (TJ), Current - Peak Pulse (10/1000µs): 870mA, Voltage - Reverse Standoff (Typ): 26V, Voltage - Zener (Nom) (Vz): 26 V, Supplier Device Package: SOT-23-3 (TO-236), Unidirectional Channels: 2, Voltage - Breakdown (Min): 31.35V, Voltage - Clamping (Max) @ Ipp: 46V, Power - Peak Pulse: 40W, Power Line Protection: No, Grade: Automotive, Power - Max: 300 mW, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA, Current - Reverse Leakage @ Vr: 50 nA @ 26 V, Qualification: AEC-Q101.
Інші пропозиції SZMMBZ33VALT1G за ціною від 2.39 грн до 23.85 грн
| Фото | Назва | Виробник | Інформація |
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SZMMBZ33VALT1G | Виробник : ONSEMI |
Description: ONSEMI - SZMMBZ33VALT1G - ESD-Schutzbaustein, 46 V, SOT-23, 3 Pin(s), 225 mW, SZMMBZxxxALT1G tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Bauform - Diode: SOT-23 hazardous: false Begrenzungsspannung Vc, max.: 46V Betriebsspannung: -V rohsPhthalatesCompliant: YES Verlustleistung Pd: 225mW usEccn: EAR99 |
на замовлення 13310 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ33VALT1G | Виробник : onsemi |
Zener Diodes ZEN REG .225W 12V |
на замовлення 29823 шт: термін постачання 105-114 дні (днів) |
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SZMMBZ33VALT1G | Виробник : ONSEMI |
Description: ONSEMI - SZMMBZ33VALT1G - ESD-Schutzbaustein, 46 V, SOT-23, 3 Pin(s), 225 mW, SZMMBZxxxALT1G tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Bauform - Diode: SOT-23 hazardous: false Begrenzungsspannung Vc, max.: 46V Betriebsspannung: -V rohsPhthalatesCompliant: YES Verlustleistung Pd: 225mW usEccn: EAR99 |
на замовлення 13310 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ33VALT1G | Виробник : ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.87A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 26V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Application: automotive industry Tolerance: ±5% кількість в упаковці: 5 шт |
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SZMMBZ33VALT1G | Виробник : onsemi |
Description: DIODE ZENER 26V SOT23-3 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Configuration: 1 Pair Common Anode Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 870mA Voltage - Reverse Standoff (Typ): 26V Voltage - Zener (Nom) (Vz): 26 V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 31.35V Voltage - Clamping (Max) @ Ipp: 46V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 26 V Qualification: AEC-Q101 |
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SZMMBZ33VALT1G | Виробник : onsemi |
Description: DIODE ZENER 26V SOT23-3 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Configuration: 1 Pair Common Anode Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 870mA Voltage - Reverse Standoff (Typ): 26V Voltage - Zener (Nom) (Vz): 26 V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 31.35V Voltage - Clamping (Max) @ Ipp: 46V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 26 V Qualification: AEC-Q101 |
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SZMMBZ33VALT1G | Виробник : ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.87A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 26V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
товар відсутній |