Технічний опис TC58CVG0S3HRAIG Toshiba Memory
Description: IC FLASH 1GBIT SPI 104MHZ 8WSON, Packaging: Tray, Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NAND (SLC), Clock Frequency: 104 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (6x8), Memory Interface: SPI, Access Time: 155 µs, Memory Organization: 128M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції TC58CVG0S3HRAIG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TC58CVG0S3HRAIG | Виробник : Kioxia America, Inc. |
 Description: IC FLASH 1GBIT SPI 104MHZ 8WSONPackaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI Access Time: 155 µs Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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