Технічний опис TC58NYG0S3HBAI6 Toshiba Memory
Description: IC FLASH 1GBIT PARALLEL 67VFBGA, DigiKey Programmable: Not Verified, Memory Organization: 128M x 8, Access Time: 25 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 25ns, Supplier Device Package: 67-VFBGA (6.5x8), Memory Format: FLASH, Technology: FLASH - NAND (SLC), Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 1Gbit, Mounting Type: Surface Mount, Package / Case: 67-VFBGA, Packaging: Tray.
Інші пропозиції TC58NYG0S3HBAI6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
TC58NYG0S3HBAI6 | Виробник : Kioxia America, Inc. |
Description: IC FLASH 1GBIT PARALLEL 67VFBGADigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 25 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Supplier Device Package: 67-VFBGA (6.5x8) Memory Format: FLASH Technology: FLASH - NAND (SLC) Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 67-VFBGA Packaging: Tray |
товару немає в наявності |
|
|
|
TC58NYG0S3HBAI6 | Виробник : Kioxia America |
NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) |
товару немає в наявності |



