Технічний опис TC58NYG0S3HBAI6 Toshiba Memory
Description: IC FLASH 1GBIT PARALLEL 67VFBGA, DigiKey Programmable: Not Verified, Memory Organization: 128M x 8, Access Time: 25 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 25ns, Supplier Device Package: 67-VFBGA (6.5x8), Memory Format: FLASH, Technology: FLASH - NAND (SLC), Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 1Gbit, Mounting Type: Surface Mount, Package / Case: 67-VFBGA, Packaging: Tray.
Інші пропозиції TC58NYG0S3HBAI6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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TC58NYG0S3HBAI6 | Kioxia America, Inc. |
Description: IC FLASH 1GBIT PARALLEL 67VFBGADigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 25 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Supplier Device Package: 67-VFBGA (6.5x8) Memory Format: FLASH Technology: FLASH - NAND (SLC) Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 67-VFBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. |
|
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TC58NYG0S3HBAI6 | Kioxia America |
NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) |
товару немає в наявності |
В кошику од. на суму грн. |
| TC58NYG0S3HBAI6 |
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Виробник: Kioxia America, Inc.
Description: IC FLASH 1GBIT PARALLEL 67VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 67-VFBGA (6.5x8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 67-VFBGA
Packaging: Tray
Description: IC FLASH 1GBIT PARALLEL 67VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 67-VFBGA (6.5x8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 67-VFBGA
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| TC58NYG0S3HBAI6 |
![]() |
Виробник: Kioxia America
NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
товару немає в наявності
В кошику
од. на суму грн.



