Технічний опис TC58NYG1S3HBAI4 Toshiba Memory
Description: IC FLASH 2GBIT 63TFBGA, Packaging: Tray, Package / Case: 63-VFBGA, Mounting Type: Surface Mount, Memory Size: 2Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: FLASH - NAND (SLC), Memory Format: FLASH, Supplier Device Package: 63-TFBGA (9x11), Write Cycle Time - Word, Page: 25ns, Memory Organization: 256M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції TC58NYG1S3HBAI4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TC58NYG1S3HBAI4 | Виробник : Kioxia America, Inc. |
 Description: IC FLASH 2GBIT 63TFBGAPackaging: Tray Package / Case: 63-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 63-TFBGA (9x11) Write Cycle Time - Word, Page: 25ns Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
товар відсутній |