Технічний опис TC6321T-V/9U Microchip Technology
Description: MOSFET N/P-CH 200V 2A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V, Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA, Supplier Device Package: 8-VDFN (6x5).
Інші пропозиції TC6321T-V/9U
| Фото | Назва | Виробник | Інформація |
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Ціна |
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| TC6321T-V/9U | Виробник : MICROCHIP TECHNOLOGY |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 200/-200V; 2/-2A; VDFN8 Case: VDFN8 Mounting: SMD Operating temperature: 0...85°C Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N/P-MOSFET Drain current: 2/-2A On-state resistance: 7/8Ω Drain-source voltage: 200/-200V Polarisation: unipolar кількість в упаковці: 3300 шт |
товару немає в наявності |
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TC6321T-V/9U | Виробник : Microchip Technology |
Description: MOSFET N/P-CH 200V 2A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA Supplier Device Package: 8-VDFN (6x5) |
товару немає в наявності |
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TC6321T-V/9U | Виробник : Microchip Technology |
Description: MOSFET N/P-CH 200V 2A 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA Supplier Device Package: 8-VDFN (6x5) |
товару немає в наявності |
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TC6321T-V/9U | Виробник : Microchip Technology |
MOSFETs Thermally enhanced version of the TC6320K6 |
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| TC6321T-V/9U | Виробник : MICROCHIP TECHNOLOGY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 200/-200V; 2/-2A; VDFN8 Case: VDFN8 Mounting: SMD Operating temperature: 0...85°C Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N/P-MOSFET Drain current: 2/-2A On-state resistance: 7/8Ω Drain-source voltage: 200/-200V Polarisation: unipolar |
товару немає в наявності |