TC6321T-V/9U Microchip Technology

Description: MOSFET N/P-CH 200V 2A 8VDFN, Supplier Device Package: 8-VDFN (6x5), Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA, FET Feature: Logic Level Gate, Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Drain to Source Voltage (Vdss): 200V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C, Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR).