TCR8BM33A,L3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.285V @ 800mA
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис TCR8BM33A,L3F Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17, Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO), Voltage Dropout (Max): 0.285V @ 800mA, Part Status: Active, Control Features: Current Limit, Enable, Voltage - Output (Min/Fixed): 3.3V, Supplier Device Package: 5-DFNB (1.2x1.2), Number of Regulators: 1, Voltage - Input (Max): 5.5V, Current - Quiescent (Iq): 36 µA, Output Configuration: Positive, Operating Temperature: -40°C ~ 85°C, Current - Output: 800mA, Mounting Type: Surface Mount, Output Type: Fixed, Package / Case: 4-XDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції TCR8BM33A,L3F за ціною від 10.98 грн до 56.19 грн
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TCR8BM33A,L3F | Toshiba Semiconductor and Storage |
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 36 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 800mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 0.285V @ 800mA Part Status: Active Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 5-DFNB (1.2x1.2) |
на замовлення 9959 шт: термін постачання 21-31 дні (днів) |
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TCR8BM33A,L3F | Toshiba |
LDO Voltage Regulators 800mA LDO, Vout=3.3V, Dropout=170mV, Iq=20uA, PSRR=98dB, in DFN5B package |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TCR8BM33A,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.285V @ 800mA
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-DFNB (1.2x1.2)
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.285V @ 800mA
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-DFNB (1.2x1.2)
на замовлення 9959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.19 грн |
| 10+ | 32.39 грн |
| 25+ | 26.74 грн |
| 100+ | 19.11 грн |
| 250+ | 16.16 грн |
| 500+ | 14.34 грн |
| 1000+ | 12.60 грн |
| 2500+ | 10.98 грн |
| TCR8BM33A,L3F |
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Виробник: Toshiba
LDO Voltage Regulators 800mA LDO, Vout=3.3V, Dropout=170mV, Iq=20uA, PSRR=98dB, in DFN5B package
LDO Voltage Regulators 800mA LDO, Vout=3.3V, Dropout=170mV, Iq=20uA, PSRR=98dB, in DFN5B package
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)