Технічний опис TCS1200 Microchip Technology
Description: RF TRANS NPN 65V 1.03GHZ 55TU-1, Packaging: Bulk, Package / Case: 55TU-1, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 10.2dBd, Power - Max: 2095W, Current - Collector (Ic) (Max): 60A, Voltage - Collector Emitter Breakdown (Max): 65V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V, Frequency - Transition: 1.03GHz, Supplier Device Package: 55TU-1, Part Status: Obsolete.
Інші пропозиції TCS1200
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| TCS1200 | Виробник : Microsemi Corporation |
 Description: RF TRANS NPN 65V 1.03GHZ 55TU-1Packaging: Bulk Package / Case: 55TU-1 Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 10.2dBd Power - Max: 2095W Current - Collector (Ic) (Max): 60A Voltage - Collector Emitter Breakdown (Max): 65V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Frequency - Transition: 1.03GHz Supplier Device Package: 55TU-1 Part Status: Obsolete |
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| TCS1200 | Виробник : Microsemi |
RF Bipolar Transistors Bipolar/LDMOS Transistor |
товар відсутній |