Технічний опис TK040N65Z Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 57A; Idm: 228A; 360W; TO247-3, Type of transistor: N-MOSFET, Power dissipation: 360W, Case: TO247-3, Mounting: THT, Gate charge: 105nC, Kind of package: tube, On-state resistance: 33mΩ, Pulsed drain current: 228A, Polarisation: unipolar, Drain current: 57A, Kind of channel: enhancement, Drain-source voltage: 650V, Gate-source voltage: ±30V.
Інші пропозиції TK040N65Z
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| TK040N65Z,S1F(S | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 57A; Idm: 228A; 360W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 360W Case: TO247-3 Mounting: THT Gate charge: 105nC Kind of package: tube On-state resistance: 33mΩ Pulsed drain current: 228A Polarisation: unipolar Drain current: 57A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V |
товару немає в наявності |
В кошику од. на суму грн. |
| TK040N65Z,S1F(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 57A; Idm: 228A; 360W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 105nC
Kind of package: tube
On-state resistance: 33mΩ
Pulsed drain current: 228A
Polarisation: unipolar
Drain current: 57A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 57A; Idm: 228A; 360W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 105nC
Kind of package: tube
On-state resistance: 33mΩ
Pulsed drain current: 228A
Polarisation: unipolar
Drain current: 57A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
товару немає в наявності
В кошику
од. на суму грн.