TK160F10N1,LXGQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 160A TO220SM, Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: TO-220SM(W), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).