Технічний опис TK31A60W Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; Idm: 123A; 45W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 30.8A, Pulsed drain current: 123A, Power dissipation: 45W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 88mΩ, Mounting: THT, Gate charge: 86nC, Kind of package: tube, Kind of channel: enhancement.
Інші пропозиції TK31A60W
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TK10A60W,S4VX(M | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; Idm: 123A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30.8A Pulsed drain current: 123A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 88mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| TK10A60W,S4VX(M |
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; Idm: 123A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Pulsed drain current: 123A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; Idm: 123A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Pulsed drain current: 123A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.