Технічний опис TK39J60W,S1VQ(O Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO3PN, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 38.8A, Power dissipation: 270W, Case: TO3PN, Gate-source voltage: ±30V, On-state resistance: 65mΩ, Mounting: THT, Gate charge: 110nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції TK39J60W,S1VQ(O
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TK39J60W,S1VQ(O | Виробник : TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38.8A Power dissipation: 270W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK39J60W,S1VQ(O | Виробник : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38.8A Power dissipation: 270W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |