Технічний опис TK6A65W,S5X(M Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 30W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 5.8A, Pulsed drain current: 23.2A, Power dissipation: 30W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.85Ω, Mounting: THT, Gate charge: 11nC, Kind of package: tube, Kind of channel: enhancement, кількість в упаковці: 1 шт.
Інші пропозиції TK6A65W,S5X(M
| Фото | Назва | Виробник | Інформація |
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TK6A65W,S5X(M | Виробник : TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.8A Pulsed drain current: 23.2A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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TK6A65W,S5X(M | Виробник : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.8A Pulsed drain current: 23.2A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |