TK7J90E,S1E(S TOSHIBA
Виробник: TOSHIBA
Description: TOSHIBA - TK7J90E,S1E(S - Leistungs-MOSFET, n-Kanal, 900 V, 7 A, 1.6 ohm, TO-3P, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 900V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 200W
SVHC: To Be Advised
Bauform - Transistor: TO-3P
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.6ohm
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Технічний опис TK7J90E,S1E(S TOSHIBA
Description: TOSHIBA - TK7J90E,S1E(S - Leistungs-MOSFET, n-Kanal, 900 V, 7 A, 1.6 ohm, TO-3P, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 900V, rohsCompliant: YES, Dauer-Drainstrom Id: 7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 200W, SVHC: To Be Advised, Bauform - Transistor: TO-3P, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 1.6ohm.
Інші пропозиції TK7J90E,S1E(S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| TK7J90E,S1E(S | Toshiba |
товару немає в наявності |
В кошику од. на суму грн. | ||
| TK7J90E,S1E(S | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 200W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 7A Pulsed drain current: 21A Power dissipation: 200W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| TK7J90E,S1E(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 200W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 200W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 200W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 200W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.