TK7S10N1Z,LXHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Qualification: AEC-Q101
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Технічний опис TK7S10N1Z,LXHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: DPAK+, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції TK7S10N1Z,LXHQ за ціною від 25.78 грн до 63.12 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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TK7S10N1Z,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2886 шт: термін постачання 21-31 дні (днів) |
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TK7S10N1Z,LXHQ | Toshiba |
MOSFET PD=50W F=1MHZ AEC-Q101 |
на замовлення 2045 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TK7S10N1Z,LXHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2886 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.12 грн |
| 10+ | 49.29 грн |
| 100+ | 36.26 грн |
| 500+ | 28.53 грн |
| 1000+ | 25.78 грн |
| TK7S10N1Z,LXHQ |
|
Виробник: Toshiba
MOSFET PD=50W F=1MHZ AEC-Q101
MOSFET PD=50W F=1MHZ AEC-Q101
на замовлення 2045 шт:
термін постачання 21-30 дні (днів)