TN0106N3-G-P013 Microchip Technology
| Кількість | Ціна |
|---|---|
| 5+ | 80.20 грн |
| 25+ | 66.78 грн |
| 100+ | 52.69 грн |
| 1000+ | 47.94 грн |
| 4000+ | 47.87 грн |
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Технічний опис TN0106N3-G-P013 Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2V @ 500µA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Tape & Box (TB), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.
Інші пропозиції TN0106N3-G-P013
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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TN0106N3-G-P013 | Microchip Technology |
 Description: MOSFET N-CH 60V 350MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 2V @ 500µA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Tape & Box (TB) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| TN0106N3-G-P013 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 60V 350MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.