TN0110N3-G-P002 Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET N-CH 100V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 1959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.55 грн |
| 25+ | 71.82 грн |
| 100+ | 65.47 грн |
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Технічний опис TN0110N3-G-P002 Microchip Technology
Description: MOSFET N-CH 100V 350MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 500µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Інші пропозиції TN0110N3-G-P002 за ціною від 63.96 грн до 98.14 грн
| Фото | Назва | Виробник | Інформація |
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TN0110N3-G-P002 | Виробник : Microchip Technology |
MOSFET N-CH Enhancmnt Mode MOSFET |
на замовлення 1064 шт: термін постачання 21-30 дні (днів) |
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| TN0110N3-G-P002 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 350mA; Idm: 2A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.35A Pulsed drain current: 2A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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TN0110N3-G-P002 | Виробник : Microchip Technology |
Description: MOSFET N-CH 100V 350MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
товар відсутній |
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| TN0110N3-G-P002 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 350mA; Idm: 2A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.35A Pulsed drain current: 2A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Kind of package: tape Kind of channel: enhanced |
товар відсутній |