Технічний опис TN0110N3-G Microchip Technology
Description: MOSFET N-CH 100V 350MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2V @ 500µA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bag.
Інші пропозиції TN0110N3-G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
,TO-226_straightlead.jpg "TN0110N3-G") |
TN0110N3-G | Microchip Technology |
 Description: MOSFET N-CH 100V 350MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 2V @ 500µA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bag |
товару немає в наявності |
В кошику од. на суму грн. |
| TN0110N3-G |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 350MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Description: MOSFET N-CH 100V 350MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
товару немає в наявності
В кошику
од. на суму грн.