TN0604N3-G-P005 Microchip Technology
| Кількість | Ціна |
|---|---|
| 3+ | 110.09 грн |
| 25+ | 90.30 грн |
| 100+ | 70.95 грн |
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Технічний опис TN0604N3-G-P005 Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 1.6V @ 1mA, Power Dissipation (Max): 740mW (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 700mA (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Tape & Reel (TR).
Інші пропозиції TN0604N3-G-P005
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
,TO-226_straightlead.jpg "TN0604N3-G-P005") |
TN0604N3-G-P005 | Microchip Technology |
 Description: MOSFET N-CH 40V 700MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 1.6V @ 1mA Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| TN0604N3-G-P005 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Power Dissipation (Max): 740mW (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 700MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Power Dissipation (Max): 740mW (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.