Технічний опис TN0620N3-G-P014 Microchip Technology
Description: MOSFET N-CH 200V 250MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Tj), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Інші пропозиції TN0620N3-G-P014
| Фото | Назва | Виробник | Інформація |
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| TN0620N3-G-P014 | Виробник : Microchip Technology |
 Trans MOSFET N-CH Si 200V 0.25A 3-Pin TO-92 Ammo |
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| TN0620N3-G-P014 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 250mA; Idm: 2A; 1W; TO92 Mounting: THT Kind of package: Ammo Pack Power dissipation: 1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 2A Case: TO92 Drain-source voltage: 200V Drain current: 0.25A On-state resistance: 6Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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TN0620N3-G-P014 | Виробник : Microchip Technology |
Description: MOSFET N-CH 200V 250MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
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TN0620N3-G-P014 | Виробник : Microchip Technology |
MOSFET N-CH Enhancmnt Mode MOSFET |
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| TN0620N3-G-P014 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 250mA; Idm: 2A; 1W; TO92 Mounting: THT Kind of package: Ammo Pack Power dissipation: 1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 2A Case: TO92 Drain-source voltage: 200V Drain current: 0.25A On-state resistance: 6Ω Type of transistor: N-MOSFET |
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