TN5325N3-G-P002 Microchip Technology
на замовлення 1784 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.31 грн |
| 100+ | 51.44 грн |
| 500+ | 39.72 грн |
| 1000+ | 39.32 грн |
| 4000+ | 39.26 грн |
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Технічний опис TN5325N3-G-P002 Microchip Technology
Description: MOSFET N-CH 250V 215MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 215mA (Ta), Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
Інші пропозиції TN5325N3-G-P002
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| TN5325N3-G-P002 | Виробник : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 215mA; Idm: 0.8A; 0.74W; TO92 Polarisation: unipolar Power dissipation: 0.74W Kind of package: tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Mounting: THT Case: TO92 Drain-source voltage: 250V Drain current: 0.215A On-state resistance: 8Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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TN5325N3-G-P002 | Виробник : Microchip Technology |
Description: MOSFET N-CH 250V 215MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215mA (Ta) Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
товар відсутній |
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| TN5325N3-G-P002 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 215mA; Idm: 0.8A; 0.74W; TO92 Polarisation: unipolar Power dissipation: 0.74W Kind of package: tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Mounting: THT Case: TO92 Drain-source voltage: 250V Drain current: 0.215A On-state resistance: 8Ω Type of transistor: N-MOSFET |
товар відсутній |