TN5335K1-G Microchip Technology
Виробник: Microchip Technology
Description: MOSFET N-CH 350V 110MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
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Технічний опис TN5335K1-G Microchip Technology
Description: MOSFET N-CH 350V 110MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23 (TO-236AB), Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V.
Інші пропозиції TN5335K1-G за ціною від 35.68 грн до 66.64 грн
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TN5335K1-G | Microchip Technology |
MOSFETs 350V 15Ohm |
на замовлення 27378 шт: термін постачання 21-30 дні (днів) |
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TN5335K1-G | Microchip Technology |
Description: MOSFET N-CH 350V 110MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23 (TO-236AB) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
на замовлення 5652 шт: термін постачання 21-31 дні (днів) |
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| TN5335K1-G |
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Виробник: Microchip Technology
MOSFETs 350V 15Ohm
MOSFETs 350V 15Ohm
на замовлення 27378 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.48 грн |
| 10+ | 53.47 грн |
| 25+ | 42.57 грн |
| 100+ | 40.16 грн |
| 250+ | 39.88 грн |
| 500+ | 36.16 грн |
| 3000+ | 35.68 грн |
| TN5335K1-G |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 350V 110MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Description: MOSFET N-CH 350V 110MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
на замовлення 5652 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 66.64 грн |
| 25+ | 53.04 грн |
| 100+ | 48.56 грн |