TP44100SG Tagore Technology
Виробник: Tagore TechnologyDescription: GAN FET HEMT 650V .118OHM 22QFN
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVFQFN
Mounting Type: Surface Mount
Configuration: P-Channel
Technology: GaNFET (Gallium Nitride)
Supplier Device Package: 22-QFN (5x7)
Part Status: Active
Voltage - Rated: 650 V
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Drive Voltage (Max Rds On, Min Rds On): 0V, 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 400 V
на замовлення 2979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 398.70 грн |
| 10+ | 331.98 грн |
| 100+ | 288.55 грн |
| 500+ | 216.37 грн |
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Технічний опис TP44100SG Tagore Technology
Description: GAN FET HEMT 650V .118OHM 22QFN, Packaging: Tape & Reel (TR), Package / Case: 22-PowerVFQFN, Mounting Type: Surface Mount, Configuration: P-Channel, Technology: GaNFET (Gallium Nitride), Supplier Device Package: 22-QFN (5x7), Part Status: Active, Voltage - Rated: 650 V, Operating Temperature: -55°C ~ 150°C (TJ), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 118mOhm @ 500mA, 6V, Vgs(th) (Max) @ Id: 2.5V @ 11mA, Drive Voltage (Max Rds On, Min Rds On): 0V, 6V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 400 V.
Інші пропозиції TP44100SG за ціною від 528.71 грн до 528.71 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
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| TP44100SG | Виробник : Tagore Technology |
TP44100SG |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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TP44100SG | Виробник : Tagore Technology |
Description: GAN FET HEMT 650V .118OHM 22QFN Packaging: Tape & Reel (TR) Package / Case: 22-PowerVFQFN Mounting Type: Surface Mount Configuration: P-Channel Technology: GaNFET (Gallium Nitride) Supplier Device Package: 22-QFN (5x7) Part Status: Active Voltage - Rated: 650 V Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 118mOhm @ 500mA, 6V Vgs(th) (Max) @ Id: 2.5V @ 11mA Drive Voltage (Max Rds On, Min Rds On): 0V, 6V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 400 V |
товару немає в наявності |